FINE-STRUCTURE OF ELECTRON-TRANSMISSION SPECTRA ACROSS ALAS SINGLE BARRIERS

被引：12

作者：

IVCHENKO, EL ^{[1
]}

KISELEV, AA ^{[1
]}

FU, Y ^{[1
]}

WILLANDER, M ^{[1
]}

机构：

[1] LINKOPING UNIV,DEPT PHYS & MEASUREMENT TECHNOL,S-58183 LINKOPING,SWEDEN

来源：

PHYSICAL REVIEW B | 1994年 / 50卷 / 11期

关键词：

D O I：

10.1103/PhysRevB.50.7747

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We propose a general approach to the problem of intervalley mixing of electron states in heterostructures in the effective-mass method. The method has been used to calculate electron-transmission spectra across GaAs(AlAs)(M)GaAs single-barrier structures taking into account the Gamma-X mixing at interfaces. The spectra exhibit sharp peaks and dips connected with the electron resonant transmission through quasibound X-like states in the AlAs layer. The peak and dip sequence depends on the parity of M. The developed approach allows us to present the energy dependence of transmission probability in an analytical form. The low-temperature de current-voltage characteristics of the single-barrier structure has been derived making allowance for the camel-back X-band structure in bulk AlAs and GaAs.

引用

页码：7747 / 7756

页数：10

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