VALLEY MIXING EFFECTS ON ELECTRON-TUNNELING TRANSMISSION IN GAAS/ALAS HETEROSTRUCTURES

被引：7

作者：

IVCHENKO, EL ^{[1
]}

KISELEV, AA ^{[1
]}

FU, Y ^{[1
]}

WILLANDER, M ^{[1
]}

机构：

[1] LINKOPING UNIV,DEPT PHYS & MEASUREMENT TECHNOL,S-58183 LINKOPING,SWEDEN

来源：

SOLID-STATE ELECTRONICS | 1994年 / 37卷 / 4-6期

关键词：

D O I：

10.1016/0038-1101(94)90304-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We proposed a set of boundary conditions for electron envelope functions at GaAs/AlAs (001) heterointerfaces so as to take into account GAMMA - X mixing in the effective mass method. The proposed conditions enable one to obtain the dependence of the mixing effect upon the parity of monomolecular layer numbers in (GaAs)N(AlAl)M superlattices. The electron transmission spectra of GaAs(AlAs)MGaAs single barrier structures are calculated in the generalized effective-mass approximation. It is shown that the spectral fine structure depends essentially upon the parity of M. The low-temperatuer d.c. current-voltage characteristics of the single-barrier structure is derived taking into account the camel-back X-band structrure in bulk AlAs and GaAs.

引用

页码：813 / 816

页数：4

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