OPTICAL-PROPERTIES OF PHOSPHORUS-DOPED POLYCRYSTALLINE SILICON LAYERS

被引：74

作者：

LUBBERTS, G

BURKEY, BC

MOSER, F

TRABKA, EA

机构：

来源：

关键词：

D O I：

10.1063/1.328681

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：6870 / 6878

页数：9

共 23 条

[1] Anagnostopoulos C., 1980, Proceedings of the 1980 Custom Integrated Circuits Conference, P78
[2] TRANSMITTANCE OF AIR-SIO2-POLYSILICON-SIO2-SI STRUCTURES
ANAGNOSTOPOULOS, C
SADASIV, G
[J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1975, SC10 (03) : 177 - 179
[3] INFRARED ABSORPTION IN HEAVILY DOPED N-TYPE SI
BALKANSKI, M
AZIZA, A
AMZALLAG, E
[J]. PHYSICA STATUS SOLIDI, 1969, 31 (01): : 323 - +
[4] BLATT FJ, 1968, PHYSICS ELECTRONIC C, pCH10
[5] QUANTUM EFFICIENCY OF A SILICON GATE CHARGE-COUPLED OPTICAL IMAGING ARRAY
BROWN, RW
CHAMBERLAIN, SG
[J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1973, 20 (02): : 675 - 685
[6] INTRINSIC OPTICAL ABSORPTION IN SINGLE-CRYSTAL GERMANIUM AND SILICON AT 77-DEGREES-K AND 300-DEGREES-K
DASH, WC
NEWMAN, R
[J]. PHYSICAL REVIEW, 1955, 99 (04): : 1151 - 1155
[7] DYCK RH, 1977, AUG P SPIE SOLID STA, V116, P19
[8] OPTICAL INTERFERENCE METHOD FOR APPROXIMATE DETERMINATION OF REFRACTIVE-INDEX AND THICKNESS OF A TRANSPARENT LAYER
GOODMAN, AM
[J]. APPLIED OPTICS, 1978, 17 (17): : 2779 - 2787
[9] Heavens O.S., 1955, OPTICAL PROPERTIES T
[10] DETERMINATION OF FREE ELECTRON EFFECTIVE MASS OF N-TYPE SILICON
HOWARTH, LE
GILBERT, JF
[J]. JOURNAL OF APPLIED PHYSICS, 1963, 34 (01) : 236 - &