HIGH-SPEED RESPONSE CHARACTERISTICS OF GAAS OPTOELECTRONIC INTEGRATED RECEIVERS

被引：7

作者：

HAMAGUCHI, H

MAKIUCHI, M

WADA, O

机构：

来源：

ELECTRONICS LETTERS | 1986年 / 22卷 / 09期

关键词：

D O I：

10.1049/el:19860340

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：501 / 502

页数：2

相关论文

共 7 条

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[J]. APPLIED PHYSICS LETTERS, 1983, 43 (09) : 821 - 823
[4] A MONOLITHICALLY INTEGRATED ALGAAS/GAAS P-I-N/FET PHOTORECEIVER BY MOCVD
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[5] ALGAAS/GAAS P-I-N PHOTODIODE PREAMPLIFIER MONOLITHIC PHOTORECEIVER INTEGRATED ON A SEMI-INSULATING GAAS SUBSTRATE
WADA, O
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MIURA, S
MAKIUCHI, M
NAKAI, K
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SAKURAI, T
[J]. APPLIED PHYSICS LETTERS, 1985, 46 (10) : 981 - 983
[6] WADA O, 1985, OCT IOOC ECOC 85 VEN, P303
[7] WADA O, 1985, 43RD ANN DEV RES C