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SEQUENTIAL LATTICE-RELAXATION MODEL WITHIN THE DOUBLE CONFIGURATION COORDINATE FOR THE DX CENTER IN ALGAAS
被引:5
作者
:
MOCHIZUKI, Y
论文数:
0
引用数:
0
h-index:
0
机构:
Fundamental Research Laboratories, NEC Coeporation, Ysukuba, lbaraki
MOCHIZUKI, Y
MIZUTA, M
论文数:
0
引用数:
0
h-index:
0
机构:
Fundamental Research Laboratories, NEC Coeporation, Ysukuba, lbaraki
MIZUTA, M
OSHIYAMA, A
论文数:
0
引用数:
0
h-index:
0
机构:
Fundamental Research Laboratories, NEC Coeporation, Ysukuba, lbaraki
OSHIYAMA, A
机构
:
[1]
Fundamental Research Laboratories, NEC Coeporation, Ysukuba, lbaraki
来源
:
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
|
1990年
/ 29卷
/ 04期
关键词
:
AIGaAs;
Configuration coordinate;
Jahn-Teller effect;
Lattice relaxation;
OX center;
D O I
:
10.1143/JJAP.29.L530
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
We propose a new model for the DX center in AlxGa1-xAs, for which symmetry-conserving lattice relaxation (breathing distortion) is followed by successive symmetry-lowering lattice relaxation (Jahn-Teller distortion) induced by electron capture at a triplet resonant state in the conduction band. The degeneracy of the triplet state is lifted upon electron capture, and consequently a singlet state within the forbridden gap (the DX center) as well as a resonant doublet state appears. We argue that the photoionization of the DX center is an intracenter optical transition between the singlet and doublet states, and that thermal emission and capture of electrons occur through the resonant triplet state. The sequential lattice relaxation model proposed here provides a natural explantation for the puzzling experimental data available up to now. © 1990 IOP Publishing Ltd.
引用
收藏
页码:L530 / L533
页数:4
相关论文
共 27 条
[1]
CORRELATION OF PHOTOLUMINESCENCE AND DEEP TRAPPING IN METALORGANIC CHEMICAL VAPOR-DEPOSITED ALXGA1-XAS(0 LESS-THAN-OR-EQUAL-TO X LESS-THAN-OR-EQUAL-TO 0.40)
BHATTACHARYA, PK
论文数:
0
引用数:
0
h-index:
0
机构:
OREGON STATE UNIV,DEPT ELECT & COMP ENGN,CORVALLIS,OR 97331
BHATTACHARYA, PK
SUBRAMANIAN, S
论文数:
0
引用数:
0
h-index:
0
机构:
OREGON STATE UNIV,DEPT ELECT & COMP ENGN,CORVALLIS,OR 97331
SUBRAMANIAN, S
[J].
JOURNAL OF APPLIED PHYSICS,
1984,
55
(10)
: 3664
-
3668
[2]
DIRECT EVIDENCE OF THE DX CENTER LINK TO THE L-CONDUCTION-BAND MINIMUM IN GAALAS
CALLEJA, E
论文数:
0
引用数:
0
h-index:
0
CALLEJA, E
GOMEZ, A
论文数:
0
引用数:
0
h-index:
0
GOMEZ, A
MUNOZ, E
论文数:
0
引用数:
0
h-index:
0
MUNOZ, E
[J].
APPLIED PHYSICS LETTERS,
1988,
52
(05)
: 383
-
385
[3]
ENERGETICS OF DX-CENTER FORMATION IN GAAS AND ALXGA1-XAS ALLOYS
CHADI, DJ
论文数:
0
引用数:
0
h-index:
0
CHADI, DJ
CHANG, KJ
论文数:
0
引用数:
0
h-index:
0
CHANG, KJ
[J].
PHYSICAL REVIEW B,
1989,
39
(14):
: 10063
-
10074
[4]
THEORY OF THE ATOMIC AND ELECTRONIC-STRUCTURE OF DX CENTERS IN GAAS AND ALXGA1-XAS ALLOYS
CHADI, DJ
论文数:
0
引用数:
0
h-index:
0
CHADI, DJ
CHANG, KJ
论文数:
0
引用数:
0
h-index:
0
CHANG, KJ
[J].
PHYSICAL REVIEW LETTERS,
1988,
61
(07)
: 873
-
876
[5]
THEORETICAL EVIDENCE FOR AN OPTICALLY INDUCIBLE STRUCTURAL TRANSITION OF THE ISOLATED AS ANTISITE IN GAAS - IDENTIFICATION AND EXPLANATION OF EL2
DABROWSKI, J
论文数:
0
引用数:
0
h-index:
0
机构:
MAX PLANCK GESELL,FRITZ HABER INST,D-1000 BERLIN 33,FED REP GER
MAX PLANCK GESELL,FRITZ HABER INST,D-1000 BERLIN 33,FED REP GER
DABROWSKI, J
SCHEFFLER, M
论文数:
0
引用数:
0
h-index:
0
机构:
MAX PLANCK GESELL,FRITZ HABER INST,D-1000 BERLIN 33,FED REP GER
MAX PLANCK GESELL,FRITZ HABER INST,D-1000 BERLIN 33,FED REP GER
SCHEFFLER, M
[J].
PHYSICAL REVIEW LETTERS,
1988,
60
(21)
: 2183
-
2186
[6]
DEEP DONOR MODEL FOR THE PERSISTENT PHOTOCONDUCTIVITY EFFECT
HJALMARSON, HP
论文数:
0
引用数:
0
h-index:
0
HJALMARSON, HP
DRUMMOND, TJ
论文数:
0
引用数:
0
h-index:
0
DRUMMOND, TJ
[J].
APPLIED PHYSICS LETTERS,
1986,
48
(10)
: 656
-
658
[7]
INTRACENTER TRANSITIONS IN THE DOMINANT DEEP LEVEL (EL2) IN GAAS
KAMINSKA, M
论文数:
0
引用数:
0
h-index:
0
机构:
MIT,CAMBRIDGE,MA 02139
MIT,CAMBRIDGE,MA 02139
KAMINSKA, M
SKOWRONSKI, M
论文数:
0
引用数:
0
h-index:
0
机构:
MIT,CAMBRIDGE,MA 02139
MIT,CAMBRIDGE,MA 02139
SKOWRONSKI, M
LAGOWSKI, J
论文数:
0
引用数:
0
h-index:
0
机构:
MIT,CAMBRIDGE,MA 02139
MIT,CAMBRIDGE,MA 02139
LAGOWSKI, J
PARSEY, JM
论文数:
0
引用数:
0
h-index:
0
机构:
MIT,CAMBRIDGE,MA 02139
MIT,CAMBRIDGE,MA 02139
PARSEY, JM
GATOS, HC
论文数:
0
引用数:
0
h-index:
0
机构:
MIT,CAMBRIDGE,MA 02139
MIT,CAMBRIDGE,MA 02139
GATOS, HC
[J].
APPLIED PHYSICS LETTERS,
1983,
43
(03)
: 302
-
304
[8]
KAMINSKA M, 1985, PHYS REV LETT, V55, P204
[9]
MAGNETIC STUDIES OF PERSISTENT PHOTOCONDUCTIVITY IN N-ALXGA1-XAS
KHACHATURYAN, KA
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CALIF BERKELEY LAWRENCE BERKELEY LAB,CTR ADV MAT,BERKELEY,CA 94720
KHACHATURYAN, KA
AWSCHALOM, DD
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CALIF BERKELEY LAWRENCE BERKELEY LAB,CTR ADV MAT,BERKELEY,CA 94720
AWSCHALOM, DD
ROZEN, JR
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CALIF BERKELEY LAWRENCE BERKELEY LAB,CTR ADV MAT,BERKELEY,CA 94720
ROZEN, JR
WEBER, ER
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CALIF BERKELEY LAWRENCE BERKELEY LAB,CTR ADV MAT,BERKELEY,CA 94720
WEBER, ER
[J].
PHYSICAL REVIEW LETTERS,
1989,
63
(12)
: 1311
-
1314
[10]
TRAPPING CHARACTERISTICS AND A DONOR-COMPLEX (DX) MODEL FOR THE PERSISTENT PHOTOCONDUCTIVITY TRAPPING CENTER IN TE-DOPED ALXGA1-XAS
LANG, DV
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV MASSACHUSETTS, DEPT PHYS & ASTRON, AMHERST, MA 01003 USA
UNIV MASSACHUSETTS, DEPT PHYS & ASTRON, AMHERST, MA 01003 USA
LANG, DV
LOGAN, RA
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV MASSACHUSETTS, DEPT PHYS & ASTRON, AMHERST, MA 01003 USA
UNIV MASSACHUSETTS, DEPT PHYS & ASTRON, AMHERST, MA 01003 USA
LOGAN, RA
JAROS, M
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV MASSACHUSETTS, DEPT PHYS & ASTRON, AMHERST, MA 01003 USA
UNIV MASSACHUSETTS, DEPT PHYS & ASTRON, AMHERST, MA 01003 USA
JAROS, M
[J].
PHYSICAL REVIEW B,
1979,
19
(02)
: 1015
-
1030
←
1
2
3
→
共 27 条
[1]
CORRELATION OF PHOTOLUMINESCENCE AND DEEP TRAPPING IN METALORGANIC CHEMICAL VAPOR-DEPOSITED ALXGA1-XAS(0 LESS-THAN-OR-EQUAL-TO X LESS-THAN-OR-EQUAL-TO 0.40)
BHATTACHARYA, PK
论文数:
0
引用数:
0
h-index:
0
机构:
OREGON STATE UNIV,DEPT ELECT & COMP ENGN,CORVALLIS,OR 97331
BHATTACHARYA, PK
SUBRAMANIAN, S
论文数:
0
引用数:
0
h-index:
0
机构:
OREGON STATE UNIV,DEPT ELECT & COMP ENGN,CORVALLIS,OR 97331
SUBRAMANIAN, S
[J].
JOURNAL OF APPLIED PHYSICS,
1984,
55
(10)
: 3664
-
3668
[2]
DIRECT EVIDENCE OF THE DX CENTER LINK TO THE L-CONDUCTION-BAND MINIMUM IN GAALAS
CALLEJA, E
论文数:
0
引用数:
0
h-index:
0
CALLEJA, E
GOMEZ, A
论文数:
0
引用数:
0
h-index:
0
GOMEZ, A
MUNOZ, E
论文数:
0
引用数:
0
h-index:
0
MUNOZ, E
[J].
APPLIED PHYSICS LETTERS,
1988,
52
(05)
: 383
-
385
[3]
ENERGETICS OF DX-CENTER FORMATION IN GAAS AND ALXGA1-XAS ALLOYS
CHADI, DJ
论文数:
0
引用数:
0
h-index:
0
CHADI, DJ
CHANG, KJ
论文数:
0
引用数:
0
h-index:
0
CHANG, KJ
[J].
PHYSICAL REVIEW B,
1989,
39
(14):
: 10063
-
10074
[4]
THEORY OF THE ATOMIC AND ELECTRONIC-STRUCTURE OF DX CENTERS IN GAAS AND ALXGA1-XAS ALLOYS
CHADI, DJ
论文数:
0
引用数:
0
h-index:
0
CHADI, DJ
CHANG, KJ
论文数:
0
引用数:
0
h-index:
0
CHANG, KJ
[J].
PHYSICAL REVIEW LETTERS,
1988,
61
(07)
: 873
-
876
[5]
THEORETICAL EVIDENCE FOR AN OPTICALLY INDUCIBLE STRUCTURAL TRANSITION OF THE ISOLATED AS ANTISITE IN GAAS - IDENTIFICATION AND EXPLANATION OF EL2
DABROWSKI, J
论文数:
0
引用数:
0
h-index:
0
机构:
MAX PLANCK GESELL,FRITZ HABER INST,D-1000 BERLIN 33,FED REP GER
MAX PLANCK GESELL,FRITZ HABER INST,D-1000 BERLIN 33,FED REP GER
DABROWSKI, J
SCHEFFLER, M
论文数:
0
引用数:
0
h-index:
0
机构:
MAX PLANCK GESELL,FRITZ HABER INST,D-1000 BERLIN 33,FED REP GER
MAX PLANCK GESELL,FRITZ HABER INST,D-1000 BERLIN 33,FED REP GER
SCHEFFLER, M
[J].
PHYSICAL REVIEW LETTERS,
1988,
60
(21)
: 2183
-
2186
[6]
DEEP DONOR MODEL FOR THE PERSISTENT PHOTOCONDUCTIVITY EFFECT
HJALMARSON, HP
论文数:
0
引用数:
0
h-index:
0
HJALMARSON, HP
DRUMMOND, TJ
论文数:
0
引用数:
0
h-index:
0
DRUMMOND, TJ
[J].
APPLIED PHYSICS LETTERS,
1986,
48
(10)
: 656
-
658
[7]
INTRACENTER TRANSITIONS IN THE DOMINANT DEEP LEVEL (EL2) IN GAAS
KAMINSKA, M
论文数:
0
引用数:
0
h-index:
0
机构:
MIT,CAMBRIDGE,MA 02139
MIT,CAMBRIDGE,MA 02139
KAMINSKA, M
SKOWRONSKI, M
论文数:
0
引用数:
0
h-index:
0
机构:
MIT,CAMBRIDGE,MA 02139
MIT,CAMBRIDGE,MA 02139
SKOWRONSKI, M
LAGOWSKI, J
论文数:
0
引用数:
0
h-index:
0
机构:
MIT,CAMBRIDGE,MA 02139
MIT,CAMBRIDGE,MA 02139
LAGOWSKI, J
PARSEY, JM
论文数:
0
引用数:
0
h-index:
0
机构:
MIT,CAMBRIDGE,MA 02139
MIT,CAMBRIDGE,MA 02139
PARSEY, JM
GATOS, HC
论文数:
0
引用数:
0
h-index:
0
机构:
MIT,CAMBRIDGE,MA 02139
MIT,CAMBRIDGE,MA 02139
GATOS, HC
[J].
APPLIED PHYSICS LETTERS,
1983,
43
(03)
: 302
-
304
[8]
KAMINSKA M, 1985, PHYS REV LETT, V55, P204
[9]
MAGNETIC STUDIES OF PERSISTENT PHOTOCONDUCTIVITY IN N-ALXGA1-XAS
KHACHATURYAN, KA
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CALIF BERKELEY LAWRENCE BERKELEY LAB,CTR ADV MAT,BERKELEY,CA 94720
KHACHATURYAN, KA
AWSCHALOM, DD
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CALIF BERKELEY LAWRENCE BERKELEY LAB,CTR ADV MAT,BERKELEY,CA 94720
AWSCHALOM, DD
ROZEN, JR
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CALIF BERKELEY LAWRENCE BERKELEY LAB,CTR ADV MAT,BERKELEY,CA 94720
ROZEN, JR
WEBER, ER
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CALIF BERKELEY LAWRENCE BERKELEY LAB,CTR ADV MAT,BERKELEY,CA 94720
WEBER, ER
[J].
PHYSICAL REVIEW LETTERS,
1989,
63
(12)
: 1311
-
1314
[10]
TRAPPING CHARACTERISTICS AND A DONOR-COMPLEX (DX) MODEL FOR THE PERSISTENT PHOTOCONDUCTIVITY TRAPPING CENTER IN TE-DOPED ALXGA1-XAS
LANG, DV
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV MASSACHUSETTS, DEPT PHYS & ASTRON, AMHERST, MA 01003 USA
UNIV MASSACHUSETTS, DEPT PHYS & ASTRON, AMHERST, MA 01003 USA
LANG, DV
LOGAN, RA
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV MASSACHUSETTS, DEPT PHYS & ASTRON, AMHERST, MA 01003 USA
UNIV MASSACHUSETTS, DEPT PHYS & ASTRON, AMHERST, MA 01003 USA
LOGAN, RA
JAROS, M
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV MASSACHUSETTS, DEPT PHYS & ASTRON, AMHERST, MA 01003 USA
UNIV MASSACHUSETTS, DEPT PHYS & ASTRON, AMHERST, MA 01003 USA
JAROS, M
[J].
PHYSICAL REVIEW B,
1979,
19
(02)
: 1015
-
1030
←
1
2
3
→