MAGNETIC STUDIES OF PERSISTENT PHOTOCONDUCTIVITY IN N-ALXGA1-XAS

被引：57

作者：

KHACHATURYAN, KA

AWSCHALOM, DD

ROZEN, JR

WEBER, ER

机构：

[1] UNIV CALIF BERKELEY LAWRENCE BERKELEY LAB,CTR ADV MAT,BERKELEY,CA 94720

[2] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

关键词：

D O I：

10.1103/PhysRevLett.63.1311

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：1311 / 1314

页数：4

共 20 条

[1] LOW-NOISE MODULAR MICROSUSCEPTOMETER USING NEARLY QUANTUM LIMITED DC SQUIDS
AWSCHALOM, DD
ROZEN, JR
KETCHEN, MB
GALLAGHER, WJ
KLEINSASSER, AW
SANDSTROM, RL
BUMBLE, B
[J]. APPLIED PHYSICS LETTERS, 1988, 53 (21) : 2108 - 2110
[2] BUSCH G, 1953, HELV PHYS ACTA, V26, P611
[3] EVIDENCE AGAINST THE NEGATIVE-CHARGE-STATE MODEL FOR THE DX CENTER IN N-TYPE GAAS - REPLY
CHADI, DJ
CHANG, KJ
WALUKIEWICZ, W
[J]. PHYSICAL REVIEW LETTERS, 1989, 62 (16) : 1923 - 1923
[4] THEORY OF THE ATOMIC AND ELECTRONIC-STRUCTURE OF DX CENTERS IN GAAS AND ALXGA1-XAS ALLOYS
CHADI, DJ
CHANG, KJ
[J]. PHYSICAL REVIEW LETTERS, 1988, 61 (07) : 873 - 876
[5] COMPREHENSIVE ANALYSIS OF SI-DOPED ALXGA1-XAS (X=0 TO 1) - THEORY AND EXPERIMENTS
CHAND, N
HENDERSON, T
KLEM, J
MASSELINK, WT
FISCHER, R
CHANG, YC
MORKOC, H
[J]. PHYSICAL REVIEW B, 1984, 30 (08): : 4481 - 4492
[6] EFFECT OF TE AND S DONOR LEVELS ON PROPERTIES OF GAAS1-XPX NEAR DIRECT-INDIRECT TRANSITION
CRAFORD, MG
STILLMAN, GE
ROSSI, JA
HOLONYAK, N
[J]. PHYSICAL REVIEW, 1968, 168 (03): : 867 - &
[7] LARGE-LATTICE-RELAXATION VERSUS SMALL-LATTICE-RELAXATION MODELS OF THE DX CENTERS IN GA1-XALXAS
DMOCHOWSKI, JE
LANGER, JM
RACZYNSKA, J
JANTSCH, W
[J]. PHYSICAL REVIEW B, 1988, 38 (05): : 3276 - 3279
[8] GLASER ER, IN PRESS
[9] MAGNETIZATION IN PHOSPHORUS DOPED SILICON
IKEHATA, S
EMA, T
KOBAYASHI, SI
SASAKI, W
[J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1981, 50 (11) : 3655 - 3660
[10] KHACHATURYAN K, 1989, 15TH P INT C DEF SEM, P1067