SPUTTERING MEASUREMENTS WITH DOUBLE RESONATOR TECHNIQUE

[1] SPUTTERING EXPERIMENTS IN THE HIGH ENERGY REGION [J]. NUCLEAR INSTRUMENTS & METHODS, 1961, 11 (02): : 279 - 289

[2] ALMEN O, 1962, 8TH T NATL VAC S WAS, V1, P245

[3] ANDERSEN HH, 1972, RADIAT EFF, V13, P67

[4] SIMULTANEOUS THIN-FILM STRESS AND MASS-CHANGE MEASUREMENTS USING QUARTZ RESONATORS [J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (04) : 1330 - +

[5] SPUTTERING AND STRAIN OF SILICON BY ION IMPLANTATION [J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (01) : 480 - &

[6] EERNISSE EP, TO BE PUBLISHED

[7] SPUTTERING YIELD MEASUREMENTS WITH LOW-ENERGY METAL ION BEAMS [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (07) : 2911 - &

[8] NEW METHOD FOR MEASURING SPUTTERING IN REGION NEAR THRESHOLD [J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1961, 32 (02) : 133 - &

[9] THEORY OF SPUTTERING .I. SPUTTERING YIELD OF AMORPHOUS AND POLYCRYSTALLINE TARGETS [J]. PHYSICAL REVIEW, 1969, 184 (02): : 383 - +

[1] SPUTTERING EXPERIMENTS IN THE HIGH ENERGY REGION [J]. NUCLEAR INSTRUMENTS & METHODS, 1961, 11 (02): : 279 - 289

[2] ALMEN O, 1962, 8TH T NATL VAC S WAS, V1, P245

[3] ANDERSEN HH, 1972, RADIAT EFF, V13, P67

[4] SIMULTANEOUS THIN-FILM STRESS AND MASS-CHANGE MEASUREMENTS USING QUARTZ RESONATORS [J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (04) : 1330 - +

[5] SPUTTERING AND STRAIN OF SILICON BY ION IMPLANTATION [J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (01) : 480 - &

[6] EERNISSE EP, TO BE PUBLISHED

[7] SPUTTERING YIELD MEASUREMENTS WITH LOW-ENERGY METAL ION BEAMS [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (07) : 2911 - &

[8] NEW METHOD FOR MEASURING SPUTTERING IN REGION NEAR THRESHOLD [J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1961, 32 (02) : 133 - &

[9] THEORY OF SPUTTERING .I. SPUTTERING YIELD OF AMORPHOUS AND POLYCRYSTALLINE TARGETS [J]. PHYSICAL REVIEW, 1969, 184 (02): : 383 - +