HOMOGENEOUS INCREASE IN OXYGEN CONCENTRATION IN CZOCHRALSKI SILICON-CRYSTALS BY A CUSP MAGNETIC-FIELD

被引：24

作者：

HIRATA, H

HOSHIKAWA, K

机构：

[1] NTT LSI Lab, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 1989年 / 98卷 / 04期

关键词：

Cusp Magnetic Fields - Czochralski Silicon Crystals;

D O I：

10.1016/0022-0248(89)90317-5

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：777 / 781

页数：5

共 9 条

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[3]

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ARAI, T ;

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[8]

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[9] CONCENTRATION, SOLUBILITY, AND EQUILIBRIUM DISTRIBUTION COEFFICIENT OF NITROGEN AND OXYGEN IN SEMICONDUCTOR SILICON [J].

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