ETCHING OF THIN SIO2 LAYERS USING WET HF GAS

被引：55

作者：

VANDERHEIDE, PAM

HOFMAN, MJB

RONDE, HJ

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1989年 / 7卷 / 03期

关键词：

D O I：

10.1116/1.576033

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：1719 / 1723

页数：5

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