DEEP LEVELS ASSOCIATED WITH OXIDATION INDUCED STACKING-FAULTS IN N-TYPE SILICON

Deep level transient spectroscopy (DLTS) has been used to measure the electrical activity of oxidation induced stacking faults in silicon. It is found that if the entire stacking fault is examined, a broad, almost featureless DLTS spectrum is observed. If, however, the fault is spatially profiled, the spectrum deconvolutes into the form of DLTS peaks usually associated with point defects. We link one of the states specifically with the Frank partial dislocation bounding the stacking fault. This state has an activation energy which depends on its position along the partial dislocation.