AN AC CONDUCTANCE TECHNIQUE FOR MEASURING SELF-HEATING IN SOI MOSFETS

被引：51

作者：

TU, RH

WANN, C

KING, JC

KO, PK

HU, CM

机构：

[1] Electronics Research Laboratory, University of California, Berkeley

来源：

IEEE ELECTRON DEVICE LETTERS | 1995年 / 16卷 / 02期

关键词：

D O I：

10.1109/55.386025

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, we present a new technique for isolating the electrical behavior of an SOI MOSFET's from the self-heating effect using an ac conductance method. This method reconstructs an I-V curve by integrating high frequency output conductance data. The heating effect is eliminated when the frequency is much higher than the inverse of the thermal time constant of the SOI device. We present measurement results from SOI MOSFET's that demonstrate that heating can indeed be significant in SOI devices.

引用

页码：67 / 69

页数：3

共 7 条

[1] BERGER M, 1991 IEEE INT SOI C, P24
[2] CALVIGLIA A, 1993, IEEE ELECTRON DEVICE, V14, P133
[3] LEE M, 1993 IEEE INT SOI C, P150
[4] ELECTRICAL TRANSIENT STUDY OF NEGATIVE-RESISTANCE IN SOI MOS-TRANSISTORS
LENEEL, O
HAOND, M
[J]. ELECTRONICS LETTERS, 1990, 26 (01) : 73 - 74
[5] PHYSICAL ORIGIN OF NEGATIVE DIFFERENTIAL RESISTANCE IN SOI TRANSISTORS
MCDAID, LJ
HALL, S
MELLOR, PH
ECCLESTON, W
ALDERMAN, JC
[J]. ELECTRONICS LETTERS, 1989, 25 (13) : 827 - 828
[6] MEASUREMENT AND MODELING OF SELF-HEATING IN SOI NMOSFETS
SU, LT
CHUNG, JE
ANTONIADIS, DA
GOODSON, KE
FLIK, MI
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1994, 41 (01) : 69 - 75
[7] ANALYTICAL DEVICE MODEL OF SOI MOSFETS INCLUDING SELF-HEATING EFFECT
YASUDA, N
UENO, S
TANIGUCHI, K
HAMAGUCHI, C
YAMAGUCHI, Y
NISHIMURA, T
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1991, 30 (12B): : 3677 - 3684

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