PHYSICAL ORIGIN OF NEGATIVE DIFFERENTIAL RESISTANCE IN SOI TRANSISTORS

被引：83

作者：

MCDAID, LJ ^{[1
]}

HALL, S ^{[1
]}

MELLOR, PH ^{[1
]}

ECCLESTON, W ^{[1
]}

ALDERMAN, JC ^{[1
]}

机构：

[1] PLESSEY CASWELL LTD,ALLEN CLARK RES CTR,TOWCESTER NN12 8EQ,NORTHANTS,ENGLAND

来源：

ELECTRONICS LETTERS | 1989年 / 25卷 / 13期

关键词：

D O I：

10.1049/el:19890557

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：827 / 828

页数：2

共 7 条

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[7] MODELING THERMAL EFFECTS ON MOS IV CHARACTERISTICS [J].

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IEEE ELECTRON DEVICE LETTERS, 1983, 4 (10) :362-364

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