ORIGIN OF DEEP DONORS IN ALSB GROWN BY MOLECULAR-BEAM EPITAXY

被引：15

作者：

FURUKAWA, A ^{[1
]}

IDESHITA, S ^{[1
]}

机构：

[1] NEC CORP LTD,FUNDAMENTAL RES LABS,TSUKUBA,IBARAKI 305,JAPAN

来源：

JOURNAL OF APPLIED PHYSICS | 1994年 / 75卷 / 10期

关键词：

D O I：

10.1063/1.355741

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The origin of deep donors in not intentionally doped AlSb grown by molecular beam epitaxy (MBE) has been investigated. It was found that the origin of deep donor is oxygen incorporated during growth of AlSb, and that oxygen comes mainly from the Sb source material used in MBE growth. Decreasing oxygen density in Sb reduced the deep donor density to 5.5 x 10(15) CM-3 in AlSb and reduced the electron density to about 2.5 X 10(11) CM-2 in the InAs/AlSb quantum well.

引用

页码：5012 / 5015

页数：4

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