DEPENDENCE OF ELECTRON ACCUMULATION IN ALSB/INAS QUANTUM-WELL ON THIN SURFACE MATERIALS OF INAS AND GASB

被引：11

作者：

FURUKAWA, A

机构：

[1] Fundamental Research Laboratories, NEC Corporation, Tsukuba, Ibaraki 305, 34, Miyukigaoka

来源：

APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 24期

关键词：

D O I：

10.1063/1.109111

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The role of thin surface material in electron accumulation of an AlSb/InAs quantum-well system is reported. Electron density transferred from surface to well is much smaller when InAs was grown at the surface than when GaSb was grown at the surface. This result is explained by the difference of surface pinning positions between InAs and GaSb. The surface pinning position of InAs is obtained to be lower by 0.2 eV than that of GaSb.

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页码：3150 / 3152

页数：3

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