ELECTRICAL-PROPERTIES AND BAND OFFSETS OF INAS/ALSB N-N ISOTYPE HETEROJUNCTIONS GROWN ON GAAS

被引：87

作者：

NAKAGAWA, A ^{[1
]}

KROEMER, H ^{[1
]}

ENGLISH, JH ^{[1
]}

机构：

[1] UNIV CALIF SANTA BARBARA,DEPT ELECT & COMP ENGN,SANTA BARBARA,CA 93106

来源：

APPLIED PHYSICS LETTERS | 1989年 / 54卷 / 19期

关键词：

D O I：

10.1063/1.101233

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

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页码：1893 / 1895

页数：3

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