DETERMINATION OF IMPURITY PROFILES IN PRESENCE OF DEEP LEVELS BY SECOND-HARMONIC METHOD

被引:5
作者
SCHIBLI, EG
机构
关键词
D O I
10.1016/0038-1101(72)90074-3
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:137 / +
页数:1
相关论文
共 5 条
[1]   A TECHNIQUE FOR DIRECTLY PLOTTING INVERSE DOPING PROFILE OF SEMICONDUCTOR WAFERS [J].
COPELAND, JA .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1969, ED16 (05) :445-&
[2]   FREQUENCY DEPENDENCE OF REVERSE-BIASED CAPACITANCE OF GOLD-DOPED SILICON P+N STEP JUNCTIONS [J].
SAH, CT ;
REDDI, VGK .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1964, ED11 (07) :345-+
[3]   EFFECTS OF DEEP IMPURITIES ON N+P JUNCTION REVERSE-BIASED SMALL-SIGNAL CAPACITANCE [J].
SCHIBLI, E ;
MILNES, AG .
SOLID-STATE ELECTRONICS, 1968, 11 (03) :323-+
[4]   CAPACITANCE-VOLTAGE RELATIONS OF SCHOTTKY AND P-N DIODES IN PRESENCE OF BOTH SHALLOW AND DEEP IMPURITIES [J].
VANOPDORP, C .
PHYSICA STATUS SOLIDI, 1969, 32 (01) :81-+