THE INFLUENCE OF N2 PARTIAL-PRESSURE AND SUBSTRATE BIAS ON ELECTRON-DENSITY AND TEMPERATURE IN A DC SPUTTERING DIODE

被引：14

作者：

LEMPERIERE, G

POITEVIN, JM

机构：

来源：

VACUUM | 1987年 / 37卷 / 11-12期

关键词：

D O I：

10.1016/0042-207X(87)90182-5

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：825 / 830

页数：6

共 16 条

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