ENHANCED DISPLACEMENT DAMAGE EFFECTIVENESS IN IRRADIATED SILICON DEVICES

被引：69

作者：

SROUR, JR

HARTMANN, RA

机构：

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1989年 / 36卷 / 06期

关键词：

D O I：

10.1109/23.45375

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1825 / 1830

页数：6

共 30 条

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