FABRICATION OF INP/INGAAS PHOTODIODES FOR HIGH BIT RATE COMMUNICATION BY REACTIVE ION ETCHING

被引：9

作者：

SETO, M

DERI, RJ

SCHIAVONE, LM

BHAT, R

SOOLE, JBD

SCHUMACHER, H

ANDREADAKIS, NC

KOZA, M

机构：

[1] Bell Communications Research, 331 Newman Springs Road Red Bank

[2] University of Ulm, PO Box 4066

来源：

ELECTRONICS LETTERS | 1991年 / 27卷 / 11期

关键词：

PHOTODIODES; DIODES; OPTICAL COMMUNICATION;

D O I：

10.1049/el:19910571

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

It is shown that reactive ion etching can be used for mesa etching and selfaligned contact cap removal in InP/InGaAs photodiode fabrication, without inducing unacceptable diode leakage currents. Mesa diodes with approximately 100 nA leakage, 90% quantum efficiency, and 12 GHz bandwidth at 5 V bias and 1.3-mu-m wavelength, and pairs and quadruplets of such detectors for coherent lightwave systems are demonstrated.

引用

页码：911 / 913

页数：3

共 8 条

[1]

BAUER JG, 1990, SEP P EUR C OPT COMM, P1045

[2]

BISCHOFF JC, 1988, 18TH P EUR SOL STAT, pC4329

[3] MEASUREMENT OF ABSORPTION-COEFFICIENTS OF GA0.47IN0.53AS OVER THE WAVELENGTH RANGE 1.0-1.7-MU-M [J].