EVALUATION OF SINGLE OHMIC METALLIZATIONS FOR CONTACTING BOTH PARA-TYPE AND NORMAL-TYPE GAINAS

被引：31

作者：

SHANTHARAMA, LG

SCHUMACHER, H

LEBLANC, HP

ESAGUI, R

BHAT, R

KOZA, M

机构：

[1] Bellcore, 07701 New Jersey, 331, Newman Springs Road Red Bank

来源：

ELECTRONICS LETTERS | 1990年 / 26卷 / 15期

关键词：

Semiconductor devices and materials;

D O I：

10.1049/el:19900729

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The contact resistivity of various non-alloyed ohmic contact metallisations on both n- and p-type Ga0.47In0.53As has been investigated. Pd/AuGe metallisation was found to be most suitable when layers of both doping types were to be contacted in a single step, having lower contact resistivities on p+-GalnAs than Ti/Pt/Au and AuBe/Pt/Au. On n+-GaInAs, the contact resistivity was found to be almost independent of the metallisation used. © 1990, The Institution of Electrical Engineers. All rights reserved.

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页码：1127 / 1129

页数：3

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