SOLID-PHASE EPITAXIAL PD/GE OHMIC CONTACTS TO IN1-XGAXASYP1-Y/INP

被引:31
作者
CHEN, WX
HSUEH, SC
YU, PKL
LAU, SS
机构
关键词
D O I
10.1109/EDL.1986.26443
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:471 / 473
页数:3
相关论文
共 8 条
[1]   MODELS FOR CONTACTS TO PLANAR DEVICES [J].
BERGER, HH .
SOLID-STATE ELECTRONICS, 1972, 15 (02) :145-&
[2]   SCHOTTKY-BARRIER HEIGHT OF AU-PARA-INGAASP ALLOYS LATTICE-MATCHED TO INP [J].
ESCHER, JS ;
JAMES, LW ;
SANKARAN, R ;
ANTYPAS, GA ;
MOON, RL ;
BELL, RL .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (04) :874-875
[3]   LOW RESISTANCE OHMIC CONTACTS TO NORMAL-INP AND PARA-INP [J].
KUPHAL, E .
SOLID-STATE ELECTRONICS, 1981, 24 (01) :69-&
[4]   NON-ALLOYED OHMIC CONTACT TO NORMAL-GAAS BY SOLID-PHASE EPITAXY [J].
MARSHALL, ED ;
CHEN, WX ;
WU, CS ;
LAU, SS ;
KUECH, TF .
APPLIED PHYSICS LETTERS, 1985, 47 (03) :298-300
[5]   SCHOTTKY BARRIERS AND OHMIC CONTACTS ON NORMAL-TYPE INP BASED COMPOUND SEMICONDUCTORS FOR MICROWAVE FETS [J].
MORKOC, H ;
DRUMMOND, TJ ;
STANCHAK, CM .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (01) :1-5
[6]   CONTACT RESISTANCE DEPENDENCE ON INGAASP LAYERS LATTICE-MATCHED TO INP [J].
NAKANO, Y ;
TAKAHASHI, S ;
TOYOSHIMA, Y .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (08) :L495-L497
[7]   AU/BE OHMIC CONTACTS TO P-TYPE INDIUM-PHOSPHIDE [J].
VALOIS, AJ ;
ROBINSON, GY .
SOLID-STATE ELECTRONICS, 1982, 25 (10) :973-977
[8]   THERMAL-REACTION OF GOLD METALLIZATION ON INP [J].
WADA, O .
JOURNAL OF APPLIED PHYSICS, 1985, 57 (06) :1901-1909