FULLY SELF-ALIGNED MICROWAVE INP/GAINAS SINGLE HETEROJUNCTION BIPOLAR-TRANSISTORS

被引：2

作者：

SHANTHARAMA, LG

SCHUMACHER, H

HAYES, JR

BHAT, R

ESAGUI, R

KOZA, M

机构：

来源：

ELECTRONICS LETTERS | 1989年 / 25卷 / 02期

关键词：

D O I：

10.1049/el:19890093

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：127 / 128

页数：2

共 5 条

[1] OMCVD-GROWN INP/GAINAS HETEROJUNCTION BIPOLAR-TRANSISTORS [J].

HAYES, JR ;

BHAT, R ;

SCHUMACHER, H ;

KOZA, M .

ELECTRONICS LETTERS, 1987, 23 (24) :1298-1299

[2] ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS WITH SMALL SIZE FABRICATED BY A MULTIPLE SELF-ALIGNMENT PROCESS USING ONE MASK [J].

INADA, M ;

OTA, Y ;

NAKAGAWA, A ;

YANAGIHARA, M ;

HIROSE, T ;

EDA, K .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (12) :2405-2411

[3] ALGAAS/GAAS HBTS FABRICATED BY A SELF-ALIGNMENT TECHNOLOGY USING POLYIMIDE FOR ELECTRODE SEPARATION [J].

MORIZUKA, K ;

ASAKA, M ;

IIZUKA, N ;

TSUDA, K ;

OBARA, M .

IEEE ELECTRON DEVICE LETTERS, 1988, 9 (11) :598-600

[4] HIGH-SPEED SELF-ALIGNED INP/GALNAS DOUBLE HETEROSTRUCTURE BIPOLAR-TRANSISTOR WITH HIGH CURRENT-DRIVING CAPABILITY [J].

SCHUMACHER, H ;

SHANTHARAMA, LG ;

HAYES, JR ;

BHAT, R ;

ESAGUI, R ;

KOZA, M .

ELECTRONICS LETTERS, 1988, 24 (20) :1293-1294

[5] A NEW EFFECT AT HIGH CURRENTS IN HETEROSTRUCTURE BIPOLAR-TRANSISTORS [J].

TIWARI, S .

IEEE ELECTRON DEVICE LETTERS, 1988, 9 (03) :142-144

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