CONTACTS ON GAINAS

被引：9

作者：

KRAULTE, H ^{[1
]}

WOELK, E ^{[1
]}

SELDERS, J ^{[1
]}

BENEKING, H ^{[1
]}

机构：

[1] RHEIN WESTFAL TH AACHEN,INST SEMICOND ELECTR,D-5100 AACHEN,FED REP GER

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1985年 / 32卷 / 06期

关键词：

D O I：

10.1109/T-ED.1985.22083

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1119 / 1123

页数：5

共 14 条

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[3]

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[4]

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SAKATA, S .

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[6] RECTIFYING AND OHMIC CONTACTS TO GAINASP [J].

MORGAN, DV ;

FREY, J ;

DEVLIN, WJ .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (05) :1202-1205

[7] SCHOTTKY BARRIERS AND OHMIC CONTACTS ON NORMAL-TYPE INP BASED COMPOUND SEMICONDUCTORS FOR MICROWAVE FETS [J].

MORKOC, H ;

DRUMMOND, TJ ;

STANCHAK, CM .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (01) :1-5

[8] CONTACT RESISTANCE DEPENDENCE ON INGAASP LAYERS LATTICE-MATCHED TO INP [J].

NAKANO, Y ;

TAKAHASHI, S ;

TOYOSHIMA, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (08) :L495-L497

[9] OHMIC CONTACTS TO P-GAAS WITH AU-ZN-AU STRUCTURE [J].

SANADA, T ;

WADA, O .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (08) :L491-L494

[10] MODELS FOR OHMIC CONTACTS ON GRADED CRYSTALLINE OR AMORPHOUS HETEROJUNCTIONS [J].

SEBESTYEN, T .

SOLID-STATE ELECTRONICS, 1982, 25 (07) :543-550

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