MIS AND SIS SOLAR-CELLS

被引：104

作者：

SHEWCHUN, J

BURK, D

SPITZER, MB

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1980年 / 27卷 / 04期

关键词：

D O I：

10.1109/T-ED.1980.19926

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：705 / 716

页数：12

共 37 条

[1]

ANDERSON WA, 1979, POLYCRYSTALLINE SILI, P315

[2]

[Anonymous], 1845, COMMUNICATION

[3] SOLAR-CELL CHARACTERISTICS AND INTERFACIAL CHEMISTRY OF INDIUM-TIN-OXIDE-INDIUM PHOSPHIDE AND INDIUM-TIN-OXIDE-GALLIUM ARSENIDE JUNCTIONS [J].

BACHMANN, KJ ;

SCHREIBER, H ;

SINCLAIR, WR ;

SCHMIDT, PH ;

THIEL, FA ;

SPENCER, EG ;

PASTEUR, G ;

FELDMANN, WL ;

SREEHARSHA, K .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (05) :3441-3446

[4]

Burk D. E., 1976, Twelfth IEEE Photovoltaic Specialists Conference 1976, P971

[5] PHOTOVOLTAIC PROPERTIES OF MIS-SCHOTTKY BARRIERS [J].

CARD, HC .

SOLID-STATE ELECTRONICS, 1977, 20 (12) :971-976

[6] AL P-SILICON MOS PHOTOVOLTAIC CELL [J].

CHARLSON, EJ ;

LIEN, JC .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (09) :3982-3987

[7] NON-EQUILIBRIUM EFFECTS ON METAL-OXIDE-SEMICONDUCTOR TUNNEL CURRENTS [J].

CLARKE, RA ;

SHEWCHUN, J .

SOLID-STATE ELECTRONICS, 1971, 14 (10) :957-&

[8] EFFICIENT PHOTOVOLTAIC HETEROJUNCTIONS OF INDIUM TIN OXIDES ON SILICON [J].

DUBOW, JB ;

BURK, DE ;

SITES, JR .

APPLIED PHYSICS LETTERS, 1976, 29 (08) :494-496

[9] MIS SILICON SOLAR-CELLS [J].

FABRE, E .

APPLIED PHYSICS LETTERS, 1976, 29 (09) :607-610

[10]

Feng T., 1978, Thirteenth IEEE Photovoltaic Specialists Conference1978, P519

← 1 2 3 4 →