PHYSICS OF ULTRA-PURE GERMANIUM

被引：201

作者：

HALLER, EE

HANSEN, WL

GOULDING, FS

机构：

来源：

ADVANCES IN PHYSICS | 1981年 / 30卷 / 01期

关键词：

D O I：

10.1080/00018738100101357

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：93 / 138

页数：46

共 93 条

[81]

Rice T.M., 1977, SOLID STATE PHYS, V32, P1

[82] CARRIER TRAPPING IN HIGH-PURITY GERMANIUM [J].

SCHOENMAEKERS, WKH ;

CLAUWS, P ;

VANDENSTEEN, K ;

BROECKX, J ;

HENCK, R .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1979, 26 (01) :256-264

[83]

SECCOMBE SD, 1972, SOLID STATE COMMUN, V11, P1539, DOI 10.1016/0038-1098(72)90516-9

[84] FAR INFRARED PHOTOCONDUCTIVITY FROM MAJORITY AND MINORITY IMPURITIES IN HIGH-PURITY SI AND GE [J].

SKOLNICK, MS ;

EAVES, L ;

STRADLING, RA ;

PORTAL, JC ;

ASKENAZY, S .

SOLID STATE COMMUNICATIONS, 1974, 15 (08) :1403-1408

[85]

SKOLNICK MS, UNPUBLISHED

[86] SUBSTITUTIONAL DOPING OF AMORPHOUS SILICON [J].

SPEAR, WE ;

LECOMBER, PG .

SOLID STATE COMMUNICATIONS, 1975, 17 (09) :1193-1196

[87] RESISTIVITY MOBILITY AND IMPURITY LEVELS IN GAAS GE AND SI AT 300 DEGREES K [J].

SZE, SM ;

IRVIN, JC .

SOLID-STATE ELECTRONICS, 1968, 11 (06) :599-&

[88]

TAVENDALE AJ, COMMUNICATION

[89] SOLID SOLUBILITIES OF IMPURITY ELEMENTS IN GERMANIUM AND SILICON [J].

TRUMBORE, FA .

BELL SYSTEM TECHNICAL JOURNAL, 1960, 39 (01) :205-233

[90]

van Der Pauw L. J., 1958, PHILIPS RES REP, V13, P1

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