HIGH-PERFORMANCE 770-NM ALGAAS-GAASP TENSILE-STRAINED QUANTUM-WELL LASER-DIODES

被引：26

作者：

AGAHI, F ^{[1
]}

LAU, KM ^{[1
]}

CHOI, HK ^{[1
]}

BALIGA, A ^{[1
]}

ANDERSON, NG ^{[1
]}

机构：

[1] MIT,LINCOLN LAB,LEXINGTON,MA 02173

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1995年 / 7卷 / 02期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1109/68.345902

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Experimental results on tensile-strained Al0.34Ga0.66As-GaAs0.78P0.22 separate-confinement-heterostructure single-quantum-well (SCH-SQW) laser diodes are reported. Threshold current density as low as 260 A/cm2 for broad-stripe lasers with a cavity length of 1500 mum has been observed. Broad-stripe devices have operated cw at room temperature with output power as high as 620 mW/facet. Ridge-waveguide lasers have exhibited cw threshold currents as low as 13.5 mA and output power of 90 mW. The output of the tensile-strained lasers is TM polarized.

引用

收藏

页码：140 / 143

页数：4

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