OPTICAL AND COMPOSITIONAL STUDIES OF BURIED OXIDE LAYERS IN SILICON FORMED BY HIGH-DOSE IMPLANTATION

被引:8
作者
CHATER, RJ
KILNER, JA
SCHEID, E
CRISTOLOVENEAU, S
HEMMENT, PLF
REESON, KJ
机构
[1] ECOLE NATL SUPER ELECTR & RADIOELECT,PHYS COMPOSANTS SEMICOND LAB,F-38031 GRENOBLE,FRANCE
[2] UNIV SURREY,DEPT ELECT & ELECTR ENGN,GUILDFORD GU2 5XH,SURREY,ENGLAND
关键词
D O I
10.1016/0169-4332(87)90116-4
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
9
引用
收藏
页码:390 / 396
页数:7
相关论文
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