SIMS ANALYSIS OF BURIED SILICON-NITRIDE LAYERS FORMED BY HIGH-DOSE IMPLANTATION OF N-14 AND N-15

被引：22

作者：

KILNER, JA

CHATER, RJ

HEMMENT, PLF

PEART, RF

REESON, KJ

ARROWSMITH, RP

DAVIS, JR

机构：

[1] UNIV SURREY,DEPT ELECTR & ELECT ENGN,GUILDFORD GU2 5XH,SURREY,ENGLAND

[2] BRITISH TELECOM RES LABS,IPSWICH IP5 7RE,SUFFOLK,ENGLAND

来源：

关键词：

D O I：

10.1016/0168-583X(86)90288-0

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：214 / 217

页数：4

共 11 条

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HEMMENT, PLF
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[5] SILICON-ON-INSULATOR BY OXYGEN ION-IMPLANTATION
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[6] MEEKISON CD, 1985, I PHYS C SER, V76, P489
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