SILICON-ON-INSULATOR BY OXYGEN ION-IMPLANTATION

被引：22

作者：

LAM, HW

PINIZZOTTO, RF

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1983年 / 63卷 / 03期

关键词：

D O I：

10.1016/0022-0248(83)90167-7

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：554 / 558

页数：5

共 24 条

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