INFRARED-SPECTROSCOPY STUDY OF INITIAL-STAGES OF OXIDATION OF HYDROGEN-TERMINATED SI SURFACES STORED IN AIR

被引:198
作者
NIWANO, M
KAGEYAMA, J
KURITA, K
KINASHI, K
TAKAHASHI, I
MIYAMOTO, N
机构
[1] Research Institute of Electrical Communication, Tohoku University
关键词
D O I
10.1063/1.357627
中图分类号
O59 [应用物理学];
学科分类号
摘要
We have studied the initial stages of oxidation of the hydrogen-terminated Si(III) and (100) surfaces stored in air, using infrared spectroscopy in the multiple internal reflection geometry. We investigate the effect of surface roughness and humidity of air on the oxidation of the hydrogen-terminated Si surfaces. We suggest that surface roughness on a microscopic scale does not significantly affect the oxidation of the hydrogen-terminated Si surface and the oxidation occurs on the entire surface. It is demonstrated that water is predominantly involved in the oxidation of the surface Si-H bond, and that the surface Si-H bond is quite inert to the oxygen molecule.
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页码:2157 / 2163
页数:7
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