GROWTH KINETICS AND CATALYTIC EFFECTS IN VAPOR-PHASE EPITAXY OF GALLIUM NITRIDE

被引:113
作者
LIU, SS [1 ]
STEVENSON, DA [1 ]
机构
[1] STANFORD UNIV,DEPT MAT SCI & ENGN,STANFORD,CA 94305
关键词
D O I
10.1149/1.2131641
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
引用
收藏
页码:1161 / 1169
页数:9
相关论文
共 31 条
[21]   FEW CHARACTERISTICS OF EPITAXIAL GAN - ETCHING AND THERMAL-DECOMPOSITION [J].
MORIMOTO, Y .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (10) :1383-1384
[22]  
Pankove J. I., 1973, Journal of Luminescence, V6, P54, DOI 10.1016/0022-2313(73)90094-X
[23]  
Pankove J.I., 1972, J LUMIN, V5, P84, DOI DOI 10.1016/0022-2313(72)90038-5
[24]  
PANKOVE JI, 1971, RCA REV, V32, P383
[25]  
RABENAU A, 1962, COMPOUND SEMICONDUCT, V1, pCH19
[26]   NITROGEN DOPING BEHAVIOR IN GAP USING NH3 AS DOPANT SOURCE [J].
ROCCASEC.DD ;
SAUL, RH ;
LORIMOR, OG .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (07) :962-965
[27]  
SCHWAB GM, 1966, DISCUSS FARADAY SOC, V41, P252
[28]   RAMAN-SCATTERING SPECTROSCOPY APPLIED TO STUDY OF CHEMICAL VAPOR-DEPOSITION SYSTEMS [J].
SEDGWICK, TO ;
SMITH, JE .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (02) :254-258
[29]  
Sinfelt J., 1964, ADV CHEM ENG, V5, P37
[30]  
STULL DR, 1967, JANAF THERMOCHEMICAL