INITIAL GROWTH-MECHANISM OF BI-SR-CA-CU-O THIN-FILMS ON SRTIO3(110) SURFACES STUDIED BY INSITU REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION OBSERVATION

被引:4
作者
MIURA, T
ISHIZUKA, Y
机构
[1] Research and Development Center, Toshiba Corporation, Saiwai-ku, Kawasaki, 210
关键词
D O I
10.1016/0040-6090(93)90595-G
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The initial growth mechanism of Bi2Sr2Can-1CunOx (BSCCO) films was investigated on SrTiO3 (110) surfaces by in-situ reflection high energy electron diffraction (RHEED) observation. The orientations in the BSCCO thin films were controlled by the flux of metal elements in the initial growth stage. A preceding deposition of Bi produced a RHEED pattern indicating the formation of a bismuth oxide layer which assisted the growth of a half-unit cell at the beginning of codeposition. A (Bi:Sr:Ca:Cu =) 2:2:1:2 phase (117) orientation mixed with a c axis orientation was obtained. A preceding deposition of Sr, Ca and Cu produced a pattern indicating the formation of (Sr1-xCax)2CuO3 and caused epitaxial growth just after the start of codeposition, based on the structural relationship between the substrate and the perovskite structure part of the films. A 2:2:1:2 phase (119) orientation was formed.
引用
收藏
页码:189 / 192
页数:4
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