MEASUREMENT OF BAND-OFFSET OF A STRAINED-LAYER SINGLE-QUANTUM-WELL BY A CAPACITANCE-VOLTAGE TECHNIQUE

被引：19

作者：

SUBRAMANIAN, S

ARORA, BM

SRIVASTAVA, AK

FERNANDES, G

BANERJEE, S

机构：

[1] Tata Institute of Fundamental Research, Bombay 400005, Homi Bhabha Road

来源：

JOURNAL OF APPLIED PHYSICS | 1993年 / 74卷 / 12期

关键词：

D O I：

10.1063/1.354941

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on a modified Kroemer's analysis [Appl. Phys. Lett. 36, 295 (1980)] for the determination of the band offset DELTAE(c) of a single quantum well from a carrier profile obtained by capacitance-voltage measurement. The procedure is applied to a pseudomorphic GaAs/InGaAs/GaAs strained layer structure.

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页码：7618 / 7620

页数：3

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