DEFECT STRUCTURES AT THE GAAS/SI INTERFACE AFTER ANNEALING

被引：57

作者：

TSAI, HL

LEE, JW

机构：

来源：

APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 02期

关键词：

D O I：

10.1063/1.98591

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：130 / 132

页数：3

相关论文

共 4 条

[1] MATERIAL PROPERTIES OF HIGH-QUALITY GAAS EPITAXIAL LAYERS GROWN ON SI SUBSTRATES [J].

FISCHER, R ;

MORKOC, H ;

NEUMANN, DA ;

ZABEL, H ;

CHOI, C ;

OTSUKA, N ;

LONGERBONE, M ;

ERICKSON, LP .

JOURNAL OF APPLIED PHYSICS, 1986, 60 (05) :1640-1647

[2] DEFECT REDUCTION BY THERMAL ANNEALING OF GAAS-LAYERS GROWN BY MOLECULAR-BEAM EPITAXY ON SI SUBSTRATES [J].

LEE, JW ;

SHICHIJO, H ;

TSAI, HL ;

MATYI, RJ .

APPLIED PHYSICS LETTERS, 1987, 50 (01) :31-33

[3] METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS FABRICATED IN GAAS-LAYERS GROWN DIRECTLY ON SI SUBSTRATES BY MOLECULAR-BEAM EPITAXY [J].

METZE, GM ;

CHOI, HK ;

TSAUR, BY .

APPLIED PHYSICS LETTERS, 1984, 45 (10) :1107-1109

[4] HIGH-RESOLUTION ELECTRON-MICROSCOPY OF MISFIT DISLOCATIONS IN THE GAAS/SI EPITAXIAL INTERFACE [J].

OTSUKA, N ;

CHOI, C ;

NAKAMURA, Y ;

NAGAKURA, S ;

FISCHER, R ;

PENG, CK ;

MORKOC, H .

APPLIED PHYSICS LETTERS, 1986, 49 (05) :277-279