HOT-ELECTRON TRANSPORT IN A GRADED BAND-GAP BASE HETEROJUNCTION BIPOLAR-TRANSISTOR

被引：2

作者：

HAYES, JR

HARBISON, JP

机构：

来源：

APPLIED PHYSICS LETTERS | 1988年 / 53卷 / 06期

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D O I：

10.1063/1.99877

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：490 / 492

页数：3

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