PHYSICAL VAPOR-DEPOSITION OF CHROMIUM AND TITANIUM NITRIDES BY HOLLOW-CATHODE DISCHARGE PROCESS

被引：50

作者：

SATO, T ^{[1
]}

TADA, M ^{[1
]}

HUANG, YC ^{[1
]}

机构：

[1] ULVAC CORP,2500 OGISONO,CHIGASAKI,KANAGAWA,JAPAN

来源：

关键词：

D O I：

10.1016/0040-6090(78)90277-8

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：61 / 65

页数：5

共 11 条

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[2] KOMIYA S, 1974, JPN J APPL PHYS S, V2, P415
[3] HIGHLY IONIZED HOLLOW CATHODE DISCHARGE
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MICHELSON, C
[J]. JOURNAL OF APPLIED PHYSICS, 1962, 33 (08) : 2490 - &
[4] MATTOX DM, 1973, J VAC SCI TECHNOL, V10, P48
[5] HIGH RATE ION PRODUCTION FOR VACUUM DEPOSITION
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1972, 9 (06): : 1377 - &
[6] THIN-FILM FORMATION OF IN2O3, TIN, AND TAN BY RF REACTIVE ION PLATING
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1975, 12 (04): : 818 - 820
[7] Nakamura K., 1974, Journal of the Japan Institute of Metals, V38, P913
[8] EFFECT OF SUBSTRATE TEMPERATURE ON STRUCTURE OF TITANIUM CARBIDE DEPOSITED BY ACTIVATED REACTIVE EVAPORATION
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1972, 9 (06): : 1389 - &
[9] ION-PLATED TITANIUM CARBIDE COATINGS
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[J]. THIN SOLID FILMS, 1974, 22 (01) : 111 - 120
[10] INVESTIGATION OF HOT-FILAMENT AND HOLLOW-CATHODE ELECTRON-BEAM TECHNIQUES FOR ION PLATING
WAN, CT
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1971, 8 (06): : VM99 - +