VERY NARROW BASE DIODE

被引：20

作者：

REDIKER, RH

SAWYER, DE

机构：

来源：

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS | 1957年 / 45卷 / 07期

关键词：

D O I：

10.1109/JRPROC.1957.278503

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：944 / 953

页数：10

共 11 条

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[3]

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[5] TRANSIENT RESPONSE OF A P-N JUNCTION [J].

LAX, B ;

NEUSTADTER, SF .

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MUSS, DR .

JOURNAL OF APPLIED PHYSICS, 1955, 26 (12) :1514-1517

[7]

REDIKER RH, 1956, 2ND ANN M PGED IRE

[8] THE SURFACE-BARRIER TRANSISTOR .5. THE PROPERTIES OF METAL TO SEMICONDUCTOR CONTACTS [J].

SCHWARZ, RF ;

WALSH, JF .

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1953, 41 (12) :1715-1720

[9] ELECTROLYTIC SHAPING OF GERMANIUM AND SILICON [J].

UHLIR, A .

BELL SYSTEM TECHNICAL JOURNAL, 1956, 35 (02) :333-347

[10] 2-TERMINAL P-N JUNCTION DEVICES FOR FREQUENCY CONVERSION AND COMPUTATION [J].

UHLIR, A .

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1956, 44 (09) :1183-1191

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