NONLINEARITY OF PIEZORESISTANCE EFFECT IN P-TYPE AND N-TYPE SILICON

被引:26
作者
MATSUDA, K
KANDA, Y
YAMAMURA, K
SUZUKI, K
机构
[1] HAMAMATSU PHOTON KK, HAMAMATSU 435, JAPAN
[2] TOKYO METROPOLITAN INST TECHNOL, HINO, TOKYO 191, JAPAN
关键词
D O I
10.1016/0924-4247(90)85008-R
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The nonlinear piezoresistance effect in p- and n-type silicon was measured. The first- and second-order coefficients in stress were obtained. The results for n-Si are in fairly good agreement with those deduced from the stress-dependent carrier transfer theory between the valleys. The nonlinearity of the longitudinal mode in p-Si and that of the transverse mode in n-Si both under the <110> stress suggest that a third-order effect cannot be ignored. © 1990.
引用
收藏
页码:45 / 48
页数:4
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