NONLINEARITY OF PIEZORESISTANCE EFFECT IN P-TYPE AND N-TYPE SILICON

被引：26

作者：

MATSUDA, K

KANDA, Y

YAMAMURA, K

SUZUKI, K

机构：

[1] HAMAMATSU PHOTON KK, HAMAMATSU 435, JAPAN

[2] TOKYO METROPOLITAN INST TECHNOL, HINO, TOKYO 191, JAPAN

来源：

SENSORS AND ACTUATORS A-PHYSICAL | 1990年 / 21卷 / 1-3期

关键词：

D O I：

10.1016/0924-4247(90)85008-R

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The nonlinear piezoresistance effect in p- and n-type silicon was measured. The first- and second-order coefficients in stress were obtained. The results for n-Si are in fairly good agreement with those deduced from the stress-dependent carrier transfer theory between the valleys. The nonlinearity of the longitudinal mode in p-Si and that of the transverse mode in n-Si both under the <110> stress suggest that a third-order effect cannot be ignored. © 1990.

引用

收藏

页码：45 / 48

页数：4

相关论文

共 9 条

[1] TRANSPORT AND DEFORMATION-POTENTIAL THEORY FOR MANY-VALLEY SEMICONDUCTORS WITH ANISOTROPIC SCATTERING [J].

HERRING, C ;

VOGT, E .

PHYSICAL REVIEW, 1956, 101 (03) :944-961

[2] A GRAPHICAL REPRESENTATION OF THE PIEZORESISTANCE COEFFICIENTS IN SILICON [J].

KANDA, Y .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (01) :64-70

[3] NONLINEAR EFFECTS IN THE PIEZORESISTIVITY OF P-TYPE SILICON [J].

LENKKERI, JT .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1986, 136 (01) :373-385

[4] STRESS DEPENDENCE OF PIEZORESISTANCE EFFECT [J].

LONG, D .

JOURNAL OF APPLIED PHYSICS, 1961, 32 (10) :2050-&

[5] A PHENOMENOLOGICAL DERIVATION OF THE 1ST-ORDER AND 2ND-ORDER MAGNETOSTRICTION AND MORPHIC EFFECTS FOR A NICKEL CRYSTAL [J].

MASON, WP .

PHYSICAL REVIEW, 1951, 82 (05) :715-723

[6] 2ND-ORDER PIEZORESISTANCE COEFFICIENTS OF N-TYPE SILICON [J].

MATSUDA, K ;

KANDA, Y ;

SUZUKI, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1989, 28 (10) :L1676-L1677

[7] PIEZORESISTANCE EFFECT IN GERMANIUM AND SILICON [J].

SMITH, CS .

PHYSICAL REVIEW, 1954, 94 (01) :42-49

[8] ORIGIN OF THE LINEAR AND NONLINEAR PIEZORESISTANCE EFFECTS IN PARA-TYPE SILICON [J].

SUZUKI, K ;

HASEGAWA, H ;

KANDA, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (11) :L871-L874

[9] NONLINEARITY OF THE PIEZORESISTANCE EFFECT OF P-TYPE SILICON DIFFUSED LAYERS [J].

YAMADA, K ;

NISHIHARA, M ;

SHIMADA, S ;

TANABE, M ;

SHIMAZOE, M ;

MATSUOKA, Y .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (01) :71-77