EFFECTS OF ANNEAL TEMPERATURE ON THE ELECTRICAL CHARACTERISTICS OF NICKEL-BASED OHMIC CONTACTS TO BETA-SIC

被引：3

作者：

ARUGU, DO

HARRIS, GL

TAYLOR, C

机构：

[1] HOWARD UNIV,DEPT ELECTR ENGN,WASHINGTON,DC 20059

[2] SEMATECH INC,AUSTIN,TX 78741

来源：

ELECTRONICS LETTERS | 1995年 / 31卷 / 08期

关键词：

OHMIC CONTACTS; SILICON CARBIDE; ANNEALING;

D O I：

10.1049/el:19950450

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A study is presented of the effects of anneal temperature on the electrical characteristics of nickel-based ohmic contacts to beta-SiC. Patterned metal structures on SiC films were annealed at temperatures ranging from 400 to 1200 degrees C, and electrically probed. The lowest contact resistance was 1.41 x 10(-4) Omega cm(2) at 1000 degrees C.

引用

页码：678 / 680

页数：3

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