REDUCTION OF ETCH PITS IN HETEROEPITAXIAL GROWTH OF 3C-SIC ON SILICON

The formation of etch pits during heteroepitaxial growth of 3C-SiC on silicon is a common occurrence. A comparison of the morphology of 3C-SiC epilayers grown on silicon at both atmospheric and low pressures shows that the problem is more severe when the epilayers are grown at low reactor gas pressure. It is found that the density of etch pits is affected by the condition of the susceptor for both atmospheric and low pressure processes. At low pressure, the composition of the process gas during buffer layer growth plays an important role in suppressing the formation of etch pits. The nature of etch pits and various attempts to suppress the formation of etch pits are discussed.