ANALYSIS OF A GAAS METAL-MU-SEMICONDUCTOR METAL (MSM) PHOTODETECTOR WITH 0.1-MU-M FINGER SPACING

被引:12
作者
KOSCIELNIAK, WC
LITTLEJOHN, MA
PELOUARD, JL
机构
关键词
D O I
10.1109/55.31723
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:209 / 211
页数:3
相关论文
共 19 条
[1]   5.2-GHZ BANDWIDTH MONOLITHIC GAAS OPTOELECTRONIC RECEIVER [J].
HARDER, CS ;
VANZEGHBROECK, B ;
MEIER, H ;
PATRICK, W ;
VETTIGER, P .
IEEE ELECTRON DEVICE LETTERS, 1988, 9 (04) :171-173
[2]  
HONG WP, 1988, 15TH P INT S GAAS RE
[3]   HIGH-SPEED MONOLITHICALLY INTEGRATED GAAS PHOTORECEIVER USING A METAL-SEMICONDUCTOR-METAL PHOTODIODE [J].
ITO, M ;
KUMAI, T ;
HAMAGUCHI, H ;
MAKIUCHI, M ;
NAKAI, K ;
WADA, O ;
SAKURAI, T .
APPLIED PHYSICS LETTERS, 1985, 47 (11) :1129-1131
[4]   LOW DARK CURRENT GAAS METAL-SEMICONDUCTOR METAL (MSM) PHOTODIODES USING WSIX CONTACTS [J].
ITO, M ;
WADA, O .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1986, 22 (07) :1073-1077
[5]   PERFORMANCE OF A NEAR-INFRARED GAAS METAL - SEMICONDUCTOR - METAL (MSM) PHOTODETECTOR WITH ISLANDS [J].
KOSCIELNIAK, WC ;
KOLBAS, RM ;
LITTLEJOHN, MA .
IEEE ELECTRON DEVICE LETTERS, 1988, 9 (09) :485-487
[6]   DYNAMIC BEHAVIOR OF PHOTOCARRIERS IN A GAAS METAL-SEMICONDUCTOR-METAL PHOTODETECTOR WITH SUB-HALF-MICRON ELECTRODE PATTERN [J].
KOSCIELNIAK, WC ;
PELOUARD, JL ;
LITTLEJOHN, MA .
APPLIED PHYSICS LETTERS, 1989, 54 (06) :567-569
[7]   MONOLITHIC GAAS PHOTORECEIVER FOR HIGH-SPEED SIGNAL-PROCESSING APPLICATIONS [J].
LEE, WS ;
ADAMS, GR ;
MUN, J ;
SMITH, J .
ELECTRONICS LETTERS, 1986, 22 (03) :147-148
[8]  
Merzbacher E., 1970, QUANTUM MECH
[9]   MONTE-CARLO INVESTIGATION OF THE ELECTRON-HOLE-INTERACTION EFFECTS ON THE ULTRAFAST RELAXATION OF HOT PHOTOEXCITED CARRIERS IN GAAS [J].
OSMAN, MA ;
FERRY, DK .
PHYSICAL REVIEW B, 1987, 36 (11) :6018-6032
[10]   110GHZ HIGH-EFFICIENCY PHOTODIODES FABRICATED FROM INDIUM TIN OXIDE-GAAS [J].
PARKER, DG ;
SAY, PG ;
HANSOM, AM ;
SIBBETT, W .
ELECTRONICS LETTERS, 1987, 23 (10) :527-528