RADIOGENIC SN DEFECTS IN ION-IMPLANTED INP

被引:14
作者
DAMGAARD, S [1 ]
PETERSEN, JW [1 ]
WEYER, G [1 ]
机构
[1] CERN,ISOLDE COLLABORAT,CH-1211 GENEVA 23,SWITZERLAND
来源
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1981年 / 14卷 / 07期
关键词
D O I
10.1088/0022-3719/14/7/005
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:993 / 1000
页数:8
相关论文
共 18 条
  • [1] ION-IMPLANTED N-TYPE AND P-TYPE LAYERS IN INPA
    DONNELLY, JP
    HURWITZ, CE
    [J]. APPLIED PHYSICS LETTERS, 1977, 31 (07) : 418 - 420
  • [2] BERYLLIUM-ION IMPLANTATION IN INP AND IN1-XGAXASYP1-Y
    DONNELLY, JP
    ARMIENTO, CA
    [J]. APPLIED PHYSICS LETTERS, 1979, 34 (01) : 96 - 99
  • [3] MOSSBAUER STUDY OF SN IMPURITY DEFECT STRUCTURES IN GAAS
    HOLM, NE
    WEYER, G
    [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1980, 13 (06): : 1109 - 1120
  • [4] HOLM NE, 1978, DEFECTS RAD EFFECTS, P573
  • [5] NYLANDSTED LA, 1980, PHYS REV B, V21, P4951
  • [6] LATTICE-DYNAMICS OF SUBSTITUTIONAL SN-119M IN SILICON, GERMANIUM, AND ALPHA-TIN
    PETERSEN, JW
    NIELSEN, OH
    WEYER, G
    ANTONCIK, E
    DAMGAARD, S
    [J]. PHYSICAL REVIEW B, 1980, 21 (10): : 4292 - 4305
  • [7] DEFECT STRUCTURES OF ION-IMPLANTED ALPHA-TIN
    PETERSEN, JW
    WEYER, G
    DAMGAARD, S
    NIELSEN, HL
    [J]. ZEITSCHRIFT FUR PHYSIK B-CONDENSED MATTER, 1980, 38 (04): : 313 - 326
  • [8] NEW TECHNIQUES AT ISOLDE-2
    RAVN, HL
    CARRAZ, LC
    DENIMAL, J
    KUGLER, E
    SKARESTAD, M
    SUNDELL, S
    WESTGAARD, L
    [J]. NUCLEAR INSTRUMENTS & METHODS, 1976, 139 (DEC15): : 267 - 273
  • [9] CRITICAL IMPLANTATION TEMPERATURE AND ANNEALING OF INDIUM-PHOSPHIDE
    ROTHEMUND, W
    FRITZSCHE, CR
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (03): : 968 - 969
  • [10] SHUMSKII MG, 1972, SOV PHYS CRYSTALLOGR, V16, P674