RADIOGENIC SN DEFECTS IN ION-IMPLANTED INP

被引：14

作者：

DAMGAARD, S ^{[1
]}

PETERSEN, JW ^{[1
]}

WEYER, G ^{[1
]}

机构：

[1] CERN,ISOLDE COLLABORAT,CH-1211 GENEVA 23,SWITZERLAND

来源：

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1981年 / 14卷 / 07期

关键词：

D O I：

10.1088/0022-3719/14/7/005

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：993 / 1000

页数：8

共 18 条

[1] ION-IMPLANTED N-TYPE AND P-TYPE LAYERS IN INPA
DONNELLY, JP
HURWITZ, CE
[J]. APPLIED PHYSICS LETTERS, 1977, 31 (07) : 418 - 420
[2] BERYLLIUM-ION IMPLANTATION IN INP AND IN1-XGAXASYP1-Y
DONNELLY, JP
ARMIENTO, CA
[J]. APPLIED PHYSICS LETTERS, 1979, 34 (01) : 96 - 99
[3] MOSSBAUER STUDY OF SN IMPURITY DEFECT STRUCTURES IN GAAS
HOLM, NE
WEYER, G
[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1980, 13 (06): : 1109 - 1120
[4] HOLM NE, 1978, DEFECTS RAD EFFECTS, P573
[5] NYLANDSTED LA, 1980, PHYS REV B, V21, P4951
[6] LATTICE-DYNAMICS OF SUBSTITUTIONAL SN-119M IN SILICON, GERMANIUM, AND ALPHA-TIN
PETERSEN, JW
NIELSEN, OH
WEYER, G
ANTONCIK, E
DAMGAARD, S
[J]. PHYSICAL REVIEW B, 1980, 21 (10): : 4292 - 4305
[7] DEFECT STRUCTURES OF ION-IMPLANTED ALPHA-TIN
PETERSEN, JW
WEYER, G
DAMGAARD, S
NIELSEN, HL
[J]. ZEITSCHRIFT FUR PHYSIK B-CONDENSED MATTER, 1980, 38 (04): : 313 - 326
[8] NEW TECHNIQUES AT ISOLDE-2
RAVN, HL
CARRAZ, LC
DENIMAL, J
KUGLER, E
SKARESTAD, M
SUNDELL, S
WESTGAARD, L
[J]. NUCLEAR INSTRUMENTS & METHODS, 1976, 139 (DEC15): : 267 - 273
[9] CRITICAL IMPLANTATION TEMPERATURE AND ANNEALING OF INDIUM-PHOSPHIDE
ROTHEMUND, W
FRITZSCHE, CR
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (03): : 968 - 969
[10] SHUMSKII MG, 1972, SOV PHYS CRYSTALLOGR, V16, P674