SCHOTTKY-BARRIER HEIGHT DEPENDENCE ON SI CRYSTAL ORIENTATION

被引：12

作者：

GUTKNECHT, P

STRUTT, MJO

机构：

来源：

APPLIED PHYSICS LETTERS | 1972年 / 21卷 / 09期

关键词：

D O I：

10.1063/1.1654431

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：405 / +

页数：1

共 20 条

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ANANTHA, NG ;

ASHAR, KG .

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[2] REVERSE CURRENT-VOLTAGE CHARACTERISTICS OF METAL-SILICIDE SCHOTTKY DIODES [J].

ANDREWS, JM ;

LEPSELTER, MP .

SOLID-STATE ELECTRONICS, 1970, 13 (07) :1011-+

[3]

APPELS JA, 1970, PHILIPS RES REP, V25, P118

[4] GROWTH KINETICS OBSERVED IN FORMATION OF METAL SILICIDES ON SILICON [J].

BOWER, RW ;

MAYER, JW .

APPLIED PHYSICS LETTERS, 1972, 20 (09) :359-&

[5] RICHARDSON CONSTANT FOR THERMIONIC EMISSION IN SCHOTTKY BARRIER DIODES [J].

CROWELL, CR .

SOLID-STATE ELECTRONICS, 1965, 8 (04) :395-&

[6] CURRENT TRANSPORT IN METAL-SEMICONDUCTOR BARRIERS [J].

CROWELL, CR ;

SZE, SM .

SOLID-STATE ELECTRONICS, 1966, 9 (11-1) :1035-&

[7]

GIBSON WM, PRIVATE COMMUNICATIO

[8] METAL-SEMICONDUCTOR BARRIER HEIGHT MEASUREMENT BY DIFFERENTIAL CAPACITANCE METHOD - 1 CARRIER SYSTEM [J].

GOODMAN, AM .

JOURNAL OF APPLIED PHYSICS, 1963, 34 (02) :329-&

[9] ALUMINIUM SCHOTTKY BARRIERS ON SPUTTER-ETCHED SILICON [J].

GUTKNECHT, P ;

STRUTT, MJO .

ELECTRONICS LETTERS, 1971, 7 (11) :298-+

[10]

GUTKNECHT P, UNPUBLISHED

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