PHOTOLUMINESCENCE DECAY TIMES OF THE DEFECT-INDUCED BOUND-EXCITON LINES IN GAAS GROWN BY MOLECULAR-BEAM EPITAXY

Photoluminescence decay transients of the defect-induced bound-exciton lines frequently observed in GaAs grown by molecular-beam epitaxy were studied in detail in an effort to resolve discrepancies in the published results. In particular, the same high-quality sample previously used in other measurements was obtained in order to eliminate the possibility of sample variability. The nonresonantly excited transient results presented here agree with our earlier measurements made on a different sample, but differ substantially from the results reported by others for the same sample. Finally, new resonantly excited transient results are found to be quite different from the nonresonant case and lead to a clearer picture of the dynamics of this unusual system. © 1990 The American Physical Society.