SELECTIVE GE CVD AS A VIA HOLE FILLING METHOD AND SELF-ALIGNED IMPURITY DIFFUSION MICROSOURCE IN SI PROCESSING

被引：2

作者：

CHENG, ML

KOHLHASE, A

SATO, T

KOBAYASHI, S

MUROTA, J

MIKOSHIBA, N

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1989年 / 28卷 / 11期

关键词：

D O I：

10.1143/JJAP.28.2054

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L2054 / L2056

页数：3

共 15 条

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