TUNING-INITIATED FAILURE IN AVALANCHE DIODES

被引：7

作者：

EVANS, WJ

SCHARFETTER, DL

JOHNSTON, RL

KEY, PL

机构：

来源：

关键词：

D O I：

10.1063/1.1660096

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：799 / +

页数：1

共 6 条

[1] CONTROL OF ELECTRIC FIELD AT SURFACE OF P-N JUNCTIONS [J].

DAVIES, RL ;

GENTRY, FE .

[2]

EDWARDS R, 1969, INT ELECTRON DEVICES

[3] CW SILICON TRAPATT OPERATION [J].

EVANS, WJ ;

IGLESIAS, DE .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1970, 58 (02) :285-+

[4] ELECTRICAL BREAKDOWN BETWEEN CLOSE ELECTRODES IN AIR [J].

GERMER, LH .

[5]

SCHARFETTER DL, 1969, INT ELECTRON DEVICES

SCHENCK, JF ;

MIDFORD, TA .