CRITICAL THICKNESS FOR THE SI1-XGEX/SI HETEROSTRUCTURE

被引：19

作者：

FUKUDA, Y

KOHAMA, Y

OHMACHI, Y

机构：

[1] NTT Applied Electronics Laboratories, Musashino-shi, Tokyo

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1990年 / 29卷 / 01期

关键词：

Critical thickness; Molecular beam epitaxy; Si[!sub]1-x[!/sub]Ge[!sub]x[!/sub]/Si heterostructure; V-shaped dislocation;

D O I：

10.1143/JJAP.29.L20

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An energy balance theory for predicting the critical thickness of the Si1-xGex/Si heterostructure is derived based on an experimentally identified dislocation generation mechanism. The theory is in close agreement with experimental results. The critical thickness predicted by this theory is about four times that by the mechanical balance theory of Matthews and Blakeslee. © 1990 IOP Publishing Ltd.

引用

页码：L20 / L22

页数：3

共 18 条

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