PRACTICAL TECHNIQUE FOR CONTROLLING FIELD PROFILE IN THIN-LAYERS OF N-GAAS

被引：5

作者：

DEAN, RH

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1972年 / ED19卷 / 11期

关键词：

D O I：

10.1109/T-ED.1972.17566

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：1144 / +

页数：1

相关论文

共 23 条

[11] SHIELDED-CATHODE MODE GUNN DEVICE - A PROPOSED NEW MODE OF GUNN DEVICE OPERATION
HOLMSTROM, R
MITTLEMAN, SD
[J]. SOLID-STATE ELECTRONICS, 1970, 13 (04) : 513 - +
[12] SUPPRESSION OF TRAVELLING HIGH-FIELD-DOMAIN MODE OSCILLATIONS IN GAAS BY DIELECTRIC SURFACE LOADING
KATAOKA, S
TATENO, H
KAWASHIM.M
[J]. ELECTRONICS LETTERS, 1969, 5 (03) : 48 - &
[13] OBSERVATION OF CURRENT INSTABILITIES IN A DIELELECTRIC-SURFACE-LOADED NTYPE GAAS BULK ELEMENT
KATAOKA, S
TATENO, H
KAWASHIM.M
[J]. ELECTRONICS LETTERS, 1969, 5 (06) : 114 - &
[14] EFFECT OF SMALL TRANSVERSE DIMENSIONS ON OPERATION OF GUNN DEVICES
KINO, GS
ROBSON, PN
[J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1968, 56 (11): : 2056 - +
[15] KOFMANN KR, 1969, ELECTRON LETT, V5, P469
[16] KOFMANN KR, 1969, ELECTRON LETT, V5, P227
[17] GUNN EFFECT UNDER IMPERFECT CATHODE BOUNDARY CONDITIONS
KROEMER, H
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1968, ED15 (11) : 819 - +
[18] SUPPRESSION OF GUNN OSCILLATIONS BY A 2-DIMENSIONAL EFFECT
KUMABE, K
[J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1968, 56 (12): : 2172 - +
[19] DOMAIN SUPPRESSION IN GUNN DIODES
KURU, I
TAJIMA, Y
[J]. PROCEEDINGS OF THE IEEE, 1969, 57 (06) : 1215 - +
[20] A UNIPOLAR FIELD-EFFECT TRANSISTOR
SHOCKLEY, W
[J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1952, 40 (11): : 1365 - 1376