MONOLITHIC INTEGRATION OF A LIGHT-EMITTING DIODE-ARRAY AND A SILICON CIRCUIT USING TRANSFER PROCESSES

被引：21

作者：

DINGLE, BD

SPITZER, MB

MCCLELLAND, RW

FAN, JCC

ZAVRACKY, PM

机构：

[1] Kopin Corporation, Taunton, MA 02780

来源：

APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 22期

关键词：

D O I：

10.1063/1.109252

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

This letter reports the attainment of a monolithically integrated light-emitting diode array on a silicon integrated circuit. The emitters are first formed epitaxially on a lattice-matched substrate and are subsequently transferred to the silicon. Interconnections are made using thin-film techniques between the 128 separately addressable light-emitting diodes and the driver circuit. This work demonstrates attainment of a high level of optoelectronic/logic integration.

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页码：2760 / 2762

页数：3

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