INGAP ORANGE LIGHT-EMITTING-DIODES ON SI SUBSTRATES

被引：21

作者：

KONDO, S

NAGAI, H

ITOH, Y

YAMAGUCHI, M

机构：

来源：

APPLIED PHYSICS LETTERS | 1989年 / 55卷 / 19期

关键词：

D O I：

10.1063/1.102139

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1981 / 1983

页数：3

共 9 条

[1] BAND-STRUCTURE ENHANCEMENT AND OPTIMIZATION OF RADIATIVE RECOMBINATION IN GAAS1-XPX-N (AND IN1-XGAXP-N)
CAMPBELL, JC
HOLONYAK, N
CRAFORD, MG
KEUNE, DL
[J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (10) : 4543 - 4553
[2] STABILITY OF 300-K CONTINUOUS OPERATION OF P-N ALXGA1-XAS-GAAS QUANTUM-WELL LASERS GROWN ON SI
DEPPE, DG
NAM, DW
HOLONYAK, N
HSIEH, KC
MATYI, RJ
SHICHIJO, H
EPLER, JE
CHUNG, HF
[J]. APPLIED PHYSICS LETTERS, 1987, 51 (16) : 1271 - 1273
[3] ALGAAS HETEROJUNCTION VISIBLE (700 NM) LIGHT-EMITTING-DIODES ON SI SUBSTRATES FABRICATED BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
HASHIMOTO, A
KAWARADA, Y
KAMIJOH, T
AKIYAMA, M
WATANABE, N
SAKUTA, M
[J]. APPLIED PHYSICS LETTERS, 1986, 48 (23) : 1617 - 1619
[4] 680-NM BAND GAINP/ALGAINP TAPERED STRIPE LASER
IKEDA, M
SATO, H
OHATA, T
NAKANO, K
TODA, A
KUMAGAI, O
KOJIMA, C
[J]. APPLIED PHYSICS LETTERS, 1987, 51 (20) : 1572 - 1573
[5] ITOH Y, 1988, APPL PHYS LETT, V52, P1618
[6] GROWTH OF INP AND INGAAS BY MO-CHLORIDE VPE
KONDO, S
AMANO, T
NAGAI, H
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1986, 25 (09): : L770 - L772
[7] KONDO S, 1988, APPL PHYS LETT, V53, P297
[8] NEW HYDRIDE VAPOR-PHASE EPITAXY FOR GAP GROWTH ON SI
MORI, H
OGASAWARA, M
YAMAMOTO, M
TACHIKAWA, M
[J]. APPLIED PHYSICS LETTERS, 1987, 51 (16) : 1245 - 1247
[9] REDUCTION OF DISLOCATION DENSITY IN GAAS/SI BY STRAINED-LAYER SUPERLATTICE OF INXGA1-XAS-GAASYP1-Y
NISHIMURA, T
MIZUGUCHI, K
HAYAFUJI, N
MUROTANI, T
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1987, 26 (07): : L1141 - L1143

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